EFFECT OF GAMMA IRRADIATION ON ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF Cd1-xMnxTe THIN FILMS

AIIB VI groups of compound semiconductors, their solid solutions, bulk and thin films on their base have wide application possibilities in modern microelectronics. Creation of photosensitive elements and structures on the base of these semiconductors and investigations of their usage potentials in various fields of optoelectronics is one of the most actual problems of modern materials science and engineering. Recently, AII(TM= Mn, Fe, Co, etc)BVI based semimagnetic semiconductors (SMSC) compounds has attracted increasing interest since they considered a promising material for the fabrication of high-performance roomtemperature γ- and x-ray detectors. Such detectors offer great potential for nonproliferation applications, medical imaging, astrophysics research, and monitoring industrial processes, because they are able to operate at ambient temperatures, while providing a high detection efficiency and good energy resolution. The aim of the work is to determine of photosensitivity range of Cd1-xMnxTe SMSC thin films, to investigate their sensitivity to γ- irradiation and to study the creation possibility of γ- ray detectors on the base these thin films. In these respect, VAC and photoconductivity, as well as effect of γ- ray irradiation on these properties has been studied. Results of current investigation reveal that, Cd1-xMnxTe (x=0.07) epitaxial films of compounds are sensitive to γ-ray irradiation, indicating that these materials can be considered as a good candidate for γ-ray detector applications.